发明名称 Method for manufacturing a gas sensing element
摘要 The application discloses a gas sensor and a method of manufacturing a gas sensing element (1) comprising a solid electrolyte body (10), a reference gas side electrode (12) provided on the surface of said solid electrolytic body so as to be exposed to a reference gas, and a measured gas side electrode (11) provided on another surface of said solid electrolytic body so as to be exposed to a measured gas. Various manufacturing methods of the measured gas side electrode in a reducing atmosphere allow to control the crystalline structure of the thin films and hence improve the durability of the electrode against Si poisoning. In one preferred embodiment the crystal face strength ratio of the measured gas side electrode according to X-ray diffraction is 0.7 </= äI(200)/I(111)ü or 0.6 </= äI(220)/I(111)ü. <IMAGE>
申请公布号 EP1180681(A1) 申请公布日期 2002.02.20
申请号 EP20010118973 申请日期 2001.08.06
申请人 DENSO CORPORATION 发明人 E, GANG;KOBAYASHI, KIYOMI;HOTTA, YASUMICHI;FUJII, NAMITSUGU
分类号 G01N27/409;C23C18/08;C23C18/14;C23C18/18;F02B77/08;G01N27/407 主分类号 G01N27/409
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