发明名称 |
METHOD FOR ETCHING FUSE CUTTING HOLE |
摘要 |
PURPOSE: A method for etching a fuse cutting hole is provided to simplify a manufacturing process by continuously etching an insulation layer and a polysilicon layer in an etch apparatus by an in-situ method, and to uniformly maintain the thickness of the insulation layer left on a fuse by using the polysilicon layer as an etch stop layer. CONSTITUTION: A plurality of insulation layers on a bit line fuse cutting hole are selectively etched in the apparatus for etching the insulation layer by using a plate polysilicon layer(112) as an etch stop layer. The plate polysilicon layer exposed by etching the insulation layer in the etch apparatus is etched.
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申请公布号 |
KR20020012955(A) |
申请公布日期 |
2002.02.20 |
申请号 |
KR20000046231 |
申请日期 |
2000.08.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JUNG, YONG JIN |
分类号 |
H01L21/82;(IPC1-7):H01L21/82 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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