发明名称 METHOD FOR ETCHING FUSE CUTTING HOLE
摘要 PURPOSE: A method for etching a fuse cutting hole is provided to simplify a manufacturing process by continuously etching an insulation layer and a polysilicon layer in an etch apparatus by an in-situ method, and to uniformly maintain the thickness of the insulation layer left on a fuse by using the polysilicon layer as an etch stop layer. CONSTITUTION: A plurality of insulation layers on a bit line fuse cutting hole are selectively etched in the apparatus for etching the insulation layer by using a plate polysilicon layer(112) as an etch stop layer. The plate polysilicon layer exposed by etching the insulation layer in the etch apparatus is etched.
申请公布号 KR20020012955(A) 申请公布日期 2002.02.20
申请号 KR20000046231 申请日期 2000.08.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JUNG, YONG JIN
分类号 H01L21/82;(IPC1-7):H01L21/82 主分类号 H01L21/82
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