发明名称 VAPOR PHASE GROWTH METHOD, VAPOR PHASE GROWTH APPARATUS AND VAPORIZER FOR VAPOR PHASE GROWTH APPARATUS
摘要 PROBLEM TO BE SOLVED: To effectively prevent the accumulation of a reaction product with an organometallic complex as a precursor on a vaporizer or a duct line on the downstream side therefrom at a low cost without damaging the stability of the process. SOLUTION: When the vaporization of an organometallic complex Cu (hfac) TMVS is not performed by a vaporizer 2, to the inside of the gas region Av of the vaporizer 2 or the inside of piping 14 connected to a vaporizer 1 on the downstream side therefrom, a stabilizer TMVS with respect to the organometallic complex is supplied in a gas state.
申请公布号 JP2002053962(A) 申请公布日期 2002.02.19
申请号 JP20000233238 申请日期 2000.08.01
申请人 TOKYO ELECTRON LTD 发明人 KOJIMA YASUHIKO;BUZAN BANSON;HOSHINO TOMOHISA
分类号 C23C16/44;C23C16/18;C23C16/448;H01L21/205;(IPC1-7):C23C16/44 主分类号 C23C16/44
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