发明名称 |
VAPOR PHASE GROWTH METHOD, VAPOR PHASE GROWTH APPARATUS AND VAPORIZER FOR VAPOR PHASE GROWTH APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To effectively prevent the accumulation of a reaction product with an organometallic complex as a precursor on a vaporizer or a duct line on the downstream side therefrom at a low cost without damaging the stability of the process. SOLUTION: When the vaporization of an organometallic complex Cu (hfac) TMVS is not performed by a vaporizer 2, to the inside of the gas region Av of the vaporizer 2 or the inside of piping 14 connected to a vaporizer 1 on the downstream side therefrom, a stabilizer TMVS with respect to the organometallic complex is supplied in a gas state.
|
申请公布号 |
JP2002053962(A) |
申请公布日期 |
2002.02.19 |
申请号 |
JP20000233238 |
申请日期 |
2000.08.01 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
KOJIMA YASUHIKO;BUZAN BANSON;HOSHINO TOMOHISA |
分类号 |
C23C16/44;C23C16/18;C23C16/448;H01L21/205;(IPC1-7):C23C16/44 |
主分类号 |
C23C16/44 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|