| 摘要 |
A system for chemical mechanical polishing, and a method of chemical mechanical polishing and the preparation of wafer surfaces is provided. The preparation can either be a polishing operation or a buffing operation. The chemical mechanical polishing system includes a carrier to hold and rotate a wafer. The wafer has a surface area and is held by the carrier so that the surface area of the wafer to be processed is exposed. The system further includes a roller that has a process surface. The roller is configured to rotate about an axis, and the rotating process surface of the roller is applied with force against the rotating wafer surface defining a contact region on the wafer. The area of the contact region is less than the surface area of the wafer. The contact region is moved between a first region of the wafer and a second region of the wafer during the processing of the wafer, and the force and linear velocity are manipulated to control a rate of removal.
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