| 摘要 |
A lateral MOS gate semiconductor device including Zener diodes has a structure in which the Zener diodes are integrated within the device. The Zener diodes are connected in parallel to a parasitic diode within the device, between drain and source terminals, and have a relatively low breakdown voltage. Accordingly, when a large reverse voltage is applied due to an avalanche energy generated by an inductive load upon turning off the device, breakdown occurs in the Zener diodes before the internal parasitic diode, thus allowing reverse current to flow from the drain terminal to the source terminal through the Zener diodes. As described above, the reverse current flows through the Zener diodes, rather than through the parasitic diode, so that a parasitic bipolar junction transistor is prevented from being turned on. Therefore, the device can endure a high avalanche energy.
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