| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystal substrate having a large diameter, inexpensive and excellent in the heat-radiating property. SOLUTION: This crystal substrate having a large diameter, inexpensive and excellent in the heat-radiating property is obtained by using a polycrystalline SiC substrate 2 whose surface is oriented in the [111] axis direction and then growing a group III nitride single crystal 1 on the polycrystalline SiC substrate 2. |
