发明名称 Plasma processing with energy supplied
摘要 In a plasma processing method, a plasma is generated using a process gas, and an electron beam is injected into the plasma to control an electron energy distribution in the plasma. Then, a semiconductor substrate is processed using the plasma with controlled electron energy distribution.
申请公布号 US6348158(B1) 申请公布日期 2002.02.19
申请号 US19990359194 申请日期 1999.07.22
申请人 NEC CORPORATION 发明人 SAMUKAWA SEIJI
分类号 H05H1/46;C23F4/00;H01J37/32;H01L21/302;H01L21/3065;(IPC1-7):C23F1/00 主分类号 H05H1/46
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