METHOD FOR MANUFACTURING PHOTORESIST LAYER PATTERN

摘要

PURPOSE: A method for manufacturing a photoresist layer pattern is provided to simplify a manufacturing process and to precisely control a critical dimension, by performing a high heat treatment in a post exposure bake(PEB) process before a development process so that the photoresist layer pattern is hardened without an ultraviolet bake process. CONSTITUTION: A photoresist layer is applied on a semiconductor substrate(20). A predetermined region of the photoresist layer is selectively exposed. A heat treatment process is performed to eliminate the moisture and solvent existing in the exposed photoresist layer so that the photoresist layer is hardened. The photoresist layer hardened by the heat treatment is developed to form the photoresist layer pattern(22a).