| 摘要 |
PROBLEM TO BE SOLVED: To provide an evaluating sample manufacturing and evaluating method for a compound semiconductor, which can evaluate impurity density, etc., of an intermediate layer, in a short time. SOLUTION: In the evaluating sample manufacturing method for exposing one layer 13 of a plurality of layers 12, 13, 14, 15 and 16 made of GaAs or AlGaAs, having different compositions in a compound semiconductor 10 to evaluate the impurity density, etc., of the layer 13; etching solutions having selectivities for the materials of the layers 14, 15 and 16 are used for the layers 14, 15 and 16 positioned above the layer 13 to be evaluated sequentially from its upper side, so as to remove them by selective etching to obtain sample for evaluation.
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