| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile memory constituted of a magnetic resistance element capable of preventing the dielectric breakdown of a magnetic resistance element being a memory cell, and realizing a memory cell having a large capacity. SOLUTION: A wiring matrix is composed of plural rows extended in a first direction and plural columns extended in a second direction different from the first direction, and memory cells are arranged at the intersections of the plural rows and the plural columns, and the plural rows are electrically connected through the memory cells to the plural columns so that a memory cell array can be constituted, and the memory cells are respectively constituted of ferromagnetic thin films interposing an insulating film in-between. In this case, at least one row and at least one column are selectively selected from among the plural rows and the plural columns, and a prescribed currents is made to flow through the selected row and column, and a prescribed potential other than a ground potential is applied to the rows and columns other than the selected row and column.
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