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经营范围
发明名称
VERFAHREN ZUR HERSTELLUNG EINER GATEELEKTRODE FÜR EINE MOS-STRUKTUR
摘要
申请公布号
AT213094(T)
申请公布日期
2002.02.15
申请号
AT19960119052T
申请日期
1996.11.27
申请人
INFINEON TECHNOLOGIES AG
发明人
LUSTIG, BERNHARD, DR.
分类号
H01L29/78;H01L21/28;(IPC1-7):H01L21/28
主分类号
H01L29/78
代理机构
代理人
主权项
地址
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