METHOD FOR MANUFACTURING HETERO-JUNCTION BIPOLAR TRANSISTOR

摘要

PURPOSE: A method for manufacturing a hetero-junction bipolar transistor(HBT) is provided to reduce a modulation degree of a base, by uniformly controlling the flow of current injected to an emitter while precisely controlling the density in a very thin region. CONSTITUTION: A lower collector(2) and a collector Si epitaxial layer(3) are formed on a silicon substrate(1). An isolation layer is formed on the silicon substrate. A collector plug(6) and a selective implanted collector(SIC) region are formed in the active region of the silicon substrate. A mask insulation layer pattern wherein the SIC region is opened is formed on the resultant structure. A Si epitaxial layer is selectively grown by using the mask insulation layer pattern such that the Si epitaxial layer is partially and laterally over-grown on the mask insulation layer pattern. A SiGe base epitaxial layer(10) is grown on the resultant structure, and a plurality of second-dimensional doping layers are formed in the SiGe base epitaxial layer. The SiGe base epitaxial layer is patterned to define a base region. The emitter in contact with the SiGe base epitaxial layer is formed.