| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor element which can reduce complexity and the manufacture cost, by omitting the injection doping of a source/drain and the subsequent annealing, can lower the temperature of the process, and can operate in both modes of an n-type channel and a p-type channel, by merely adjusting the bias voltage of a sub gate in a thin-film transistor equipped with a sub gate and a Schottky source/drain. SOLUTION: This discloses a thin-film transistor, equipped with a sub gate and a Schottky source/drain, and its manufacturing method. The complicatedness of the process and the manufacture cost can be reduced by omitting the doping process of a source/drain and the subsequent annealing process, which have been performed conventionally. The temperature of the process can be lowered, too. This thin-film transistor, equipped with a sub gate and a Schottky source/ drain, can operate in modes of the two kinds of an n-channel and a p-type channel, on the same transistor by the bias voltage of the sub gate. Furthermore, the conventional source/drain diffusion region can be replaced by including the formation of the electrical junction by impressing the voltage to the sub gate. As a result, the leakage in off-condition can be reduced.
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