Production of an insulator used in electronic circuits comprises forming a first conducting pathway and a second conducting pathway on a semiconductor substrate using conducting silicon

摘要

Production of an insulator comprises: (i) forming a first conducting pathway (2) and a second conducting pathway (3) on a semiconductor substrate (1); (ii) conducting silicon (4) is formed between the conducting pathways and is anodically etched in an electrolyte containing hydrofluoric acid; (iii) the silicon is converted into porous silicon (5) which in turn is converted into porous silicon oxide (6) by oxidation. Preferred Features: The conducting silicon is amorphous silicon, microcrystalline silicon or polysilicon and is deposited by LPCVD, PECVD or RTCVD. Oxidation of the porous silicon is carried out with the aid of oxygen with an RTP step, oven step, plasma treatment or anodic oxidation.