| 摘要 |
<p>A process for bonding oxide-free silicon substrate pairs and other substrates at low temperature. This process involves modifying the surface of the silicon wafers (200, 203) to create defect regions (202, 204), for example by plasma-treating the surface to be bonded with boron-containing plasmas such as a B2H6 plasma (201). The surface defect regions may also be amorphized (202, 204). The treated surfaces are placed together, thus forming an attached pair at room temperature in ambient air. The bonding energy reaches approximately 400 mJ/m2 at room temperature, 900mJ/m2 at 150 °C, and 1800 mJ/m2 at 250 °C. The bulk silicon fracture energy of 2500 mJ/m2 was achieved after annealing at 350-400 °C. The release of hydrogen from B-H complexes and the subsequent absorption of the hydrogen by the plasma induced modified layers on the bonding surfaces at low temperature is most likely responsible for the enhanced bonding energy.</p> |
