Method for reading data from a memory arrangement e.g. for semiconductor memory devices such as MRAM, has address decoder connected to word- and to bit-line decoders

摘要

A method for reading data from a memory arrangement (15-18) having several memory units (11-14), each of the latter having memory cells equipped with word- and bit-lines; the memory units have a word-line decoder (2) and a bit-line decoder (3). An address decoder (21) is connected to the word-line decoders (2) and to the bit-line decoders (3). Data is read out from the memory cells alternately from different memory units (11-14).