发明名称 |
Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles |
摘要 |
In a semiconductor device manufacturing apparatus that processing a substrate by applying a voltage to a gas to create a plasma, positively charged particles are trapped or guided at the instant that the cathode voltage is stopped, by an electrode to which is imparted a negative voltage, so as to prevent particles reaching the substrate.
|
申请公布号 |
US2002019141(A1) |
申请公布日期 |
2002.02.14 |
申请号 |
US20010971463 |
申请日期 |
2001.10.05 |
申请人 |
ITO NATSUKO;UESUGI FUMIHIKO;MORIYA TSUYOSHI |
发明人 |
ITO NATSUKO;UESUGI FUMIHIKO;MORIYA TSUYOSHI |
分类号 |
H01J37/32;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01J37/32 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|