发明名称 Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles
摘要 In a semiconductor device manufacturing apparatus that processing a substrate by applying a voltage to a gas to create a plasma, positively charged particles are trapped or guided at the instant that the cathode voltage is stopped, by an electrode to which is imparted a negative voltage, so as to prevent particles reaching the substrate.
申请公布号 US2002019141(A1) 申请公布日期 2002.02.14
申请号 US20010971463 申请日期 2001.10.05
申请人 ITO NATSUKO;UESUGI FUMIHIKO;MORIYA TSUYOSHI 发明人 ITO NATSUKO;UESUGI FUMIHIKO;MORIYA TSUYOSHI
分类号 H01J37/32;(IPC1-7):H01L21/302;H01L21/461 主分类号 H01J37/32
代理机构 代理人
主权项
地址