Production of a III-V compound semiconductor based on gallium nitride comprises forming the semiconductor stacked structure on a substrate, etching, forming a first electrode, tempering, and forming a second electrode

摘要

Production of a III-V compound semiconductor based on gallium nitride comprises: (i) preparing a substrate (1) having two main surfaces; Production also comprises: (ii) forming the semiconductor stacked structure on the first main surface which joins an active layer (5) and a III-V compound semiconductor layer (6, 7) based on p-gallium nitride via a III-V compound semiconductor layer (3, 4); (iii) etching the stacked structure to expose a part of the n-semiconductor layer (3); (iv) forming a first electrode (8A) on the n-semiconductor layer, the electrode having an ohmic contact layer (81), a barrier layer (83) and a contact dot layer (84); (v) tempering to reduce the contact resistance between the first electrode and the n-semiconductor layer and simultaneously activating the p-semiconductor layer; and (vi) forming a second electrode on the p-semiconductor layer. Preferred Features: The first electrode is made of titanium/aluminum/platinum/gold. The tempering process is carried out 400-950 deg C.