| 摘要 |
A method of manufacturing a semiconductor device has the steps of: (a) preparing a semiconductor substrate formed with an insulating layer having a wiring recess; and (b) forming a conductive layer by chemical vapor deposition on a surface of the semiconductor substrate including an inner surface of the wiring recess, while lamp light is applied to the semiconductor substrate, the conductive layer being substantially made of copper. With this method, Cu wiring having a high adhesion force is formed by chemical vapor deposition.
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