Novel photoresist polymers, and photoresist compositions containing the same

摘要

Photoresist polymers represented by following Formula 3, and photoresist compositions using the same. The photoresist composition has high etching resistance, heat resistance and adhesiveness, and can be developed in aqueous tetramethylammonium hydroxide (TMAH) solution. The photoresist composition has low absorbance of a light source having wavelength of 193 nm and 157 nm, and thus is suitable for a photolithography process employing ultraviolet light sources such as ArF (193 nm) and VUV (157 nm) in fabricating minute circuits for high integration semiconductor devices. Formula 3