| 摘要 |
<p>A circuit arrangement for the protection of integrated circuits against electrostatic discharges is described, the circuit arrangement having a first MOS protective transistor, a second MOS transistor being connected between the gate terminal and source terminal of the first MOS protective transistor, the second MOS transistor being connected with its drain terminal to the gate terminal of the first MOS transistor, being connected with its source terminal to the source terminal of the first MOS transistor, and being connected with its gate terminal to the drain terminal of the first MOS transistor. At least one diode is connected between the source terminal of the second MOS transistor and the source terminal of the MOS protective transistor.</p> |
