Process for producing high-epsilon dielectric layer or ferroelectric layer

摘要

The process provides a multistage procedure, in which, in the first step the layer is sputtered at low temperature, in the second step an RTP process is carried out in an inert atmosphere at medium or high temperature, and in the third step the layer is heat treated in an atmosphere containing oxygen at low or medium temperature. The levels of heating are considerably reduced compared with conventional processes, so that when the process is being employed for producing an integrated memory cell it is possible to prevent oxidation of an underlying barrier layer.