| 发明名称 |
Multi-layered polysilicon gate process |
| 摘要 |
<p>A method for forming a notched MOS gate structure is described. A multi-layer gate structure is formed (150) where the top layer (140) oxidizes at a faster rate compared to the bottom layer (130). This results in the formation of a notch (165) in the gate structure after thermal oxidation processes. <IMAGE></p> |
| 申请公布号 |
EP1199742(A2) |
申请公布日期 |
2002.04.24 |
| 申请号 |
EP20010000537 |
申请日期 |
2001.10.12 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
GRIDER, DOUGLAS T.;HU, CHE JEN |
| 分类号 |
H01L29/43;H01L21/28;H01L29/423;H01L29/49;H01L29/78;(IPC1-7):H01L21/28;H01L21/336 |
主分类号 |
H01L29/43 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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