| 摘要 |
The present invention is related to a copper wiring in a semiconductor device. Also, the invention describes a method of a copper wiring in a semiconductor device that can not only realize repeatability of a copper deposition process, but produce a thin copper film of superior film quality because the present invention can induce perfect surface absorption reaction in copper depositing by setting optimum deposition process conditions of a copper deposition equipment and establishing a MOCVD process technology using 1,1,1,5,5,5-hexafluoro-2,4-pentadionato(vinyltrimethoxysilane)-copper(I) compound as a copper precursor.
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