发明名称 SOI TFT array substrate for LCD projection display
摘要 The invention provides a substrate and high-density pixel array for use in liquid crystal displays (LCDs). The pixels are formed using integrated circuit (IC) processes on silicon-on-insulator (SOI) substrates and include thin film transistors (TFTs) formed in single-crystal silicon. Instead of bonding a layer of single-crystal silicon to a separate transparent substrate made of glass, quartz, or another transparent material, or partially crystallizing silicon deposited on a substrate, the invention employs a unitary SOI wafer substrate having a buried insulating layer of silicon dioxide. A high-density pixel array comprising rows and columns of pixel electrodes, each controlled by a TFT, is formed in the surface layer of the substrate. The bulk silicon supporting layer, beneath the pixel array, on the opposite side of the insulating layer of the substrate, is removed. The resultant substrate includes a pixel array and a supporting layer of silicon dioxide.
申请公布号 US6346978(B1) 申请公布日期 2002.02.12
申请号 US19990352458 申请日期 1999.07.13
申请人 SHARP LABORATORIES OF AMERICA, INC. 发明人 HSU SHENG TENG;SHROYER JON ALLEN
分类号 G02F1/136;G02F1/1333;G02F1/1362;G02F1/1368;G09F9/00;G09F9/30;H01L21/02;H01L27/12;H01L29/786;(IPC1-7):G02F1/133 主分类号 G02F1/136
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