| 摘要 |
PROBLEM TO BE SOLVED: To continuously deposit a deposition film having a composition distribution to the film thickness direction on a substrate with a large area without the variation of its characteristics. SOLUTION: A long-length substrate 1 is continuously moved in the longitudinal direction, is successively passed through the inside of the space of a film deposition vessel 602 and is made into one of the side walls of the film deposition space. A gaseous starting material is introduced from a gaseous starting material fed tube (not shown in figure) through first to third gas emission ports 6051, to 6053 into the film deposition vessel 602. This gaseous starting material contains plural kinds of substances to form into the raw material of a deposition film. Plasma is generated in the space of the film deposition vessel 602 held between the long-length substrate 1 and first to third applicators 6031 to 6033, and the deposition of a deposition film is partially shielded over a prescribed range by a shielding member 610. In this way, the deposition film having a compositional distribution to the film thickness direction is deposited on the long-length substrate 1. |
