| 摘要 |
PURPOSE: Plane micro gas sensor and production method are provided to reduce the producing processes, to improve the uniformity of a temperature on a gas detecting film and to solve the lack of the stability. CONSTITUTION: Insulated supporting films(20a,20b) are spread on the upper part and the lower part of a p-typed silicon wafer substrate(10). The lower center of the lower insulated supporting film is removed by an anisotropy etching of the silicon through a first mask. A diaphragm window is formed in the center of the upper insulated supporting film. A heater(30a) is formed on the upper insulated supporting film. A gas detecting film(40) is shielded by the heater and heated by the heater through the upper insulated supporting film. Electrodes(30c) for the detecting film are located under the gas detecting film by forming in the upper insulated supporting film. Thereby, the unbalance of the temperature distribution in the detecting film is solved.
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