| 摘要 |
PROBLEM TO BE SOLVED: To suppress a dull peripheral edge of a circular work for providing a very precise flatness such as semiconductor wafers, thereby stably manufacturing a wafer having a very high flatness of 0.15 μm or less in surface reference SFQRmax, especially including regions within 2 mm from the edge. SOLUTION: In the method of polishing a circular work held with a holder plate using a polishing cloth slidably contracted to the work surface, a coat film made of a material having a lower polishing rate than the work is formed at least on a peripheral portion of the work surface, such that a central portion of the work surface is exposed or the film is formed thinner on this portion than on the peripheral portion. The work surface is polished while the backside of the work is held. The coat film is preferably a silicon oxide film, a silicon nitride film or a resin film. |
