发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory in which delicate defective cut of a fuse can be surely detected. SOLUTION: A pad giving a power source potential to a path in which a current is made to flow forward a ground node through a fuse element is provided independently separating from a pad giving a power source potential to the other circuit. A current flowing in a fuse can be measured by a tester, a minute current can be detected, delicate and defective cut can be detected.
申请公布号 JP2002042482(A) 申请公布日期 2002.02.08
申请号 JP20000218679 申请日期 2000.07.19
申请人 MITSUBISHI ELECTRIC CORP 发明人 TAWARA YOSHIAKI
分类号 G06F12/16;G11C29/00;G11C29/04;(IPC1-7):G11C29/00 主分类号 G06F12/16
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