| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory of which power consumption can be suppressed suitably while preventing destruction of data at the time of read-out operation. SOLUTION: In this semiconductor memory, read-out of data is performed by conducting selectively nodes of memory cells MC (MC11-MCij) to bit lines (B1-Bi) and /B (/B1-/Bi) by activation of word lines (W1-Wj). A word line driver WDa activates the word line W with a lower potential (Vcc-Vt) than a supply potential (Vcc) of the memory cell MC at the time of the initial stage of conduction between this node and the bit lines B, /B. After that, the word line activation potential is raised to a potential (Vcc).
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