| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem with a conventional constitution that a spacing wider than a resist resolution limit enough to prevent a 1st emitter electrode spread on an insulating film and a base electrode adjacent to it from being short-circuited is required between a base contact region and an emitter region, and further, as the film thickness of the 1st emitter electrode is thin, an emitter junction capacitance and a collector junction capacitance cannot be reduced and hence the improvement of high frequency characteristics and the improvement of the yield are limited. SOLUTION: By filling contact holes with polycrystalline silicon, a short circuit between an emitter electrode and a base electrode adjacent to it can be avoided. As a margin for avoiding the short circuit is not necessary, an emitter junction capacitance and a collector junction capacitance can be reduced, so that high frequency characteristics can be improved. Further, the yield can be improved as the result of the avoidance of the short circuit and a high frequency semiconductor device can be manufactured without increasing the number of processes.
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