发明名称 |
SILICON WAFER AND METHOD OF HEAT TREATING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of heat treating a silicon wafer and a silicon wafer which provides good characteristics and a reliability of a device built on the surface of the silicon wafer and can improve the yield without fear of dislocations, etc., on the wafer surface. SOLUTION: The silicon wafer heat treating method is characterized in that a silicon wafer doped with nitrogen is subjected to quickly heating and quickly cooling.
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申请公布号 |
JP2002043241(A) |
申请公布日期 |
2002.02.08 |
申请号 |
JP20000227750 |
申请日期 |
2000.07.27 |
申请人 |
MITSUBISHI MATERIALS SILICON CORP |
发明人 |
NAKADA YOSHINOBU;SHIRAKI HIROYUKI;SHIOTA TAKAAKI |
分类号 |
H01L21/322;H01L21/26;(IPC1-7):H01L21/26 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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