发明名称 SILICON WAFER AND METHOD OF HEAT TREATING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a method of heat treating a silicon wafer and a silicon wafer which provides good characteristics and a reliability of a device built on the surface of the silicon wafer and can improve the yield without fear of dislocations, etc., on the wafer surface. SOLUTION: The silicon wafer heat treating method is characterized in that a silicon wafer doped with nitrogen is subjected to quickly heating and quickly cooling.
申请公布号 JP2002043241(A) 申请公布日期 2002.02.08
申请号 JP20000227750 申请日期 2000.07.27
申请人 MITSUBISHI MATERIALS SILICON CORP 发明人 NAKADA YOSHINOBU;SHIRAKI HIROYUKI;SHIOTA TAKAAKI
分类号 H01L21/322;H01L21/26;(IPC1-7):H01L21/26 主分类号 H01L21/322
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