Gate transistor, used in DRAM storage cell for PCs, comprises gate arranged on substrate, source arranged next to first edge of gate, and drain arranged next to second edge of gate

摘要

A gate transistor comprises a gate (203) arranged on a substrate (201); a source (205) arranged next to the first edge of the gate and formed by introducing a first type of dopant of the n-type into the substrate; and a drain (207) arranged next to the second edge of the gate and formed by introducing a second type of dopant of the n-type into the substrate. An independent claim is also included for a storage cell comprising a storage capacitor having upper and lower nodes, and a gate transistor. Preferred Features: The first type of dopant of the n-type is phosphorus and the second type of dopant of the n-type is arsenic. The concentration of arsenic in the drain is 1018> - 1021> /cm3>.