| 摘要 |
PURPOSE: A method for fabricating an SRAM device is provided to prevent losses of a field oxide layer and a silicon substrate when a butting contact or a node contact is formed by etching. CONSTITUTION: A gate oxide layer(22) and a gate nitride layer(23) are sequentially formed on the silicon substrate(20) having the field oxide layer(21). Next, a driver transistor and an access transistor are formed, and thereby the gate nitride layer(23) remains only under a gate structure of each transistor. A nitride barrier(26) is then formed on a resultant entire structure, and an interlayer dielectric(27) is formed thereon. The interlayer dielectric(27) and the nitride barrier(26) are then sequentially etched in a region for the butting contact, so that a contact hole is formed exposing a gate(24) of the driver transistor and a junction area of the access transistor. Though the gate(24) and sidewall spacers(25) are mostly removed during the etching of the nitride barrier(26), the silicon substrate(20) and the field oxide layer(21) are protected from losses by the nitride barrier(26).
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