发明名称 METHOD OF DEPOSITING TUNGSTEN FILM FROM W(CO)6
摘要 PURPOSE: A method of depositing tungsten film from W(CO)6 is provided to increase the resistivity by affecting the electrical characteristics of the tungsten film. CONSTITUTION: The tungsten films are formed on the oxide layers by treating the oxide using a silane based gas mixture followed by the thermal decomposition of a W(CO)6 precursor. After the W(CO)6 precursor is thermally decomposed, additional layer of tungsten may be optionally formed thereon from the thermal decomposition of tungsten hexafluoride(WF6).
申请公布号 KR20020011123(A) 申请公布日期 2002.02.07
申请号 KR20010046293 申请日期 2001.07.31
申请人 APPLIED MATERIALS INC. 发明人 XI MING;YANG MICHAEL X.;YOON HYUNGSUK ALEXANDER
分类号 C23C16/16;H01L21/20;H01L21/28;H01L21/285;H01L21/3205;H01L21/768;(IPC1-7):H01L21/20 主分类号 C23C16/16
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