发明名称 |
METHOD OF DEPOSITING TUNGSTEN FILM FROM W(CO)6 |
摘要 |
PURPOSE: A method of depositing tungsten film from W(CO)6 is provided to increase the resistivity by affecting the electrical characteristics of the tungsten film. CONSTITUTION: The tungsten films are formed on the oxide layers by treating the oxide using a silane based gas mixture followed by the thermal decomposition of a W(CO)6 precursor. After the W(CO)6 precursor is thermally decomposed, additional layer of tungsten may be optionally formed thereon from the thermal decomposition of tungsten hexafluoride(WF6).
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申请公布号 |
KR20020011123(A) |
申请公布日期 |
2002.02.07 |
申请号 |
KR20010046293 |
申请日期 |
2001.07.31 |
申请人 |
APPLIED MATERIALS INC. |
发明人 |
XI MING;YANG MICHAEL X.;YOON HYUNGSUK ALEXANDER |
分类号 |
C23C16/16;H01L21/20;H01L21/28;H01L21/285;H01L21/3205;H01L21/768;(IPC1-7):H01L21/20 |
主分类号 |
C23C16/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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