发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
A semiconductor device of this invention includes a first interconnect pattern formed on a semiconductor substrate and a second interconnect pattern formed above the first interconnect pattern with an interlayer insulating film sandwiched therebetween. The first interconnect pattern includes a dummy pattern insulated from the first interconnect pattern, and the dummy pattern includes a plurality of fine patterns adjacent to each other and air gaps formed between the adjacent fine patterns.
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申请公布号 |
US2002014697(A1) |
申请公布日期 |
2002.02.07 |
申请号 |
US20010899860 |
申请日期 |
2001.07.09 |
申请人 |
TAMAOKA EIJI;NAKAGAWA HIDEO |
发明人 |
TAMAOKA EIJI;NAKAGAWA HIDEO |
分类号 |
H01L23/52;H01L21/3105;H01L21/3205;H01L21/768;H01L21/822;H01L23/522;H01L27/04;(IPC1-7):H01L21/476;H01L23/48;H01L29/40 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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