发明名称 |
SEMICONDUCTOR DEVICE HAVING A CONTACT STRUTURE USING ALUMINUM |
摘要 |
A method of fabricating a semiconductor device comprises the following steps (a) to (f): (a) a step of forming a the contact hole in an interlayer dielectric formed on a semiconductor substrate including an electronic element; (b) a degassing step for removing gaseous components included within the interlayer dielectric, by thermal processing under a reduced pressure at a substrate temperature of 300° C. to 550° C.; (c) a step of forming a barrier layer on the interlayer dielectric and the contact hole; (d) a step of cooling the substrate to a temperature of no more than 100° C.; (e) a step of forming a first aluminum layer on the barrier layer, at a temperature of no more than 200° C., including aluminum or an alloy in which aluminum is the main component; and (f) a step is of forming a second aluminum layer on the first aluminum layer, at a temperature of at least 300° C., including aluminum or an alloy in which aluminum is the main component.
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申请公布号 |
US2002014696(A1) |
申请公布日期 |
2002.02.07 |
申请号 |
US19980140016 |
申请日期 |
1998.08.26 |
申请人 |
ASAHINA MICHIO;MORIYA NAOHIRO;MATSUMOTO KAZUKI;TAKEUCHI JUNICHI |
发明人 |
ASAHINA MICHIO;MORIYA NAOHIRO;MATSUMOTO KAZUKI;TAKEUCHI JUNICHI |
分类号 |
H01L21/768;H01L23/485;H01L23/532;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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