Organic anti-reflective polymer, for fabricating ultrafine patterns and 4G DRAM semiconductor devices as it eliminates standing waves caused by optical properties of lower layers on the wafer and by thickness changes of the photoresist

摘要

Organic anti-reflective polymer is a compound of formula (1) and is useful for fabricating ultrafine patterns of 64M, 256M, 1G, and 4G DRAM semiconductor devices since it eliminates standing waves caused by the optical properties of lower layers on the wafer and by the thickness changes of the photoresist. Organic anti-reflective polymer is a compound of formula (1): [Image] R a>- R c>hydrogen or methyl; R a- R d, and R 1- R 9-H, -OH, -OCOCH 3, -COOH, -CH 2OH, or substituted or unsubstituted, or straight or branched alkyl or alkoxy alkyl having 1 - 5 C; l, m and n : an integer selected from 1, 2, 3, 4 and 5; and x, y, and z : mole fraction from 0.01 - 0.99. Independent claims are also included for: (A) an anti-reflective coating composition comprising a compound (1) and a compound of formula (2); and (B) a method for preparing an anti-reflective coating comprises: (i) dissolving compound (1) and compound (2) in an organic solvent; (ii) filtering the obtained solution alone or in combination with an anthracene derivative; (iii) coating the filtrate on a lower layer; and (iv) hard-baking the coated layer. [Image] R 10- R 11straight or branched substituted 1 - 10C alkoxy; and R 12hydrogen or methyl.