发明名称 |
Wafer pretreatment to decrease the deposition rate of silicon dioxide on silicon nitride in comparison to its deposition rate on a silicon substrate |
摘要 |
<p>A method of decreasing the growth rate of silicon dioxide films on a silicon nitride pad on a silicon wafer wherein the decrease in growth rate of the silicon dioxide results in a self-planarized film on the wafer is provided. Also provided is a method of pretreating said silicon wafer wherein said wafer is contacted with a chemical, such as hydrogen peroxide, isopropyl alcohol or acetone and air-dried prior to silicon dioxide deposition. Additionally, selective oxidation sub-atmospheric chemical vapor deposition (SELOX SACVD) uses an ozone-activated tetraethylorthosilicate process to deposit said silicon dioxide on said wafer.</p> |
申请公布号 |
EP1178528(A2) |
申请公布日期 |
2002.02.06 |
申请号 |
EP20010306570 |
申请日期 |
2001.07.31 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
HERNER, SCOTT BRAD;HERNANDEZ, MANUEL ANSELMO |
分类号 |
H01L21/316;H01L21/76;C23C16/02;C23C16/40;H01L21/205;H01L21/3105;H01L21/762;(IPC1-7):H01L21/316;H01L21/310;H01L21/306 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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