| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent N2 ions implanted into a lightly-doped-drain(LDD) region in an n-channel metal oxide semiconductor(NMOS) region from being diffused to the exterior in forming a high temperature low deposition(HLD) layer as an insulation layer for a spacer, by forming a gate insulation layer in the NMOS region and forming the LDD region at both sides of the gate electrode, by forming a buffer HLD layer and by implanting N2 ions into the LDD region and forming the HLD layer and a nitride layer sequentially. CONSTITUTION: A gate insulation layer pattern and a gate electrode(15) are stacked on the NMOS and PMOS regions of a substrate(11), wherein the gate insulation layer pattern in the NMOS region is thicker. Low density impurity ions are implanted into the substrate at both sides of the stacked structure to form the LDD region. The buffer HLD layer is formed. N2 ions are implanted into the LDD region in the NMOS region. The HLD layer and the nitride layer are sequentially formed to fabricate a Si-N coupling region(29) on the interface between the LDD region in the NMOS region and the gate insulation layer pattern. The nitride layer, the HLD layer and the buffer HLD layer are blanket-etched to form a nitride layer spacer(23) and an HLD layer spacer(19b) on the sidewall of the stacked structure. A source/drain region(25) is formed. A metal silicide layer is formed on the gate electrode and the source/drain region.
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