发明名称 COMPOSITION FOR FORMING FILM AND MATERIAL FOR FORMING INSULATING FILM
摘要 PROBLEM TO BE SOLVED: To provide a composition for forming a film excellent in heat resistance, low permittivity, and copper diffusion-preventing performances as an interlayer insulating film in a semiconductor element or the like. SOLUTION: The composition for forming a film comprises (A) both or either of an aromatic polyarylene and an aromatic polyarylene ether, (B) a compound capable of forming a complex with copper and (C) an organic solvent. The material for forming an insulating film comprises this composition for forming a film.
申请公布号 JP2002038080(A) 申请公布日期 2002.02.06
申请号 JP20000221660 申请日期 2000.07.24
申请人 JSR CORP 发明人 OKADA TAKASHI;NISHIKAWA MICHINORI;YAMADA KINJI
分类号 C09D165/02;C09D171/12;H01L21/312;H01L21/768;H01L23/522;(IPC1-7):C09D165/02 主分类号 C09D165/02
代理机构 代理人
主权项
地址