| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided, which prevents the loss of a capacitor oxide and is appropriate for assuring a sufficient height of a storage node. CONSTITUTION: After forming an impurity junction layer(22) on a semiconductor substrate, a silicon oxide is formed as a capacitor oxide(23) on the semiconductor substrate. Then, a polysilicon for a hard mask is formed on the capacitor oxide, and the impurity junction layer of the substrate where a storage node is to be formed is revealed by etching the polysilicon and the capacitor oxide selectively. After forming a polysilicon(25) for storage node on the revealed substrate, an MPS(Metastable Polysilicon)(26) is formed on a surface of the polysilicon for storage node. The MPS increases a surface area of the storage node to increase a capacitance of the capacitor. Then a storage node is formed by a CMP(Chemical Mechanical Polishing) process until the capacitor oxide is revealed. And a photoresist between the storage nodes is stripped.
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