| 摘要 |
PURPOSE: A method for manufacturing a contact of a semiconductor device is provided to prevent an epitaxial silicon layer from being unnecessarily grown by metallic impurities on the boundary between a mask nitride layer on a word line and a nitride layer spacer, by using a plasma deposition method using SiH4 gas before an epitaxial silicon layer for the contact is grown. CONSTITUTION: The word line composed of a stacked structure including the mask nitride layer(24) is formed on a semiconductor substrate(21). A sidewall nitride layer is formed on the entire surface including the word line, and is blanket-etched to form the nitride layer spacer(25) in contact with both sidewalls of the word line. A barrier oxide layer is formed on the entire surface including the nitride layer spacer to prevent out-diffusion between the nitride layer spacer and the epitaxial silicon layer(30). The barrier oxide layer is selectively etched to expose the semiconductor substrate for the contact. The epitaxial silicon layer is selectively formed on the exposed semiconductor substrate.
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