| 摘要 |
PURPOSE: A method for forming an inter-metal dielectric film of a semiconductor device is provided, which is appropriate for preventing the generation of a crack while preventing the increase of a dielectric constant. CONSTITUTION: According to the method, a number of metal interconnect lines(22) are formed on a semiconductor substrate, and then the first FSG(Fluorine-doped Silicate Glass) film(23) is formed so that an air gap is formed on a part with a narrow gap among the metal interconnect lines. Then, the second FSG film(24) is formed on the first FSG film, in order to bury the gap of the first FSG film formed on a part with a wide gap of the metal interconnect lines. And the third FSG film(25) is formed on the second FSG film.
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