Semiconductor device comprising transistor

摘要

An n- epitaxial layer serving as a collector region is formed on a p-type silicon substrate. A p diffusion layer serving as a base region is formed on the n- epitaxial layer. An n- diffusion layer and an n+ diffusion layer defining an emitter region are formed on the p diffusion layer. A p+ diffusion layer serving as a base contact region for attaining contact with the p diffusion layer is formed with a prescribed interval between the same and the emitter region. Thus obtained is a semiconductor device comprising a transistor suppressing dispersion of a current amplification factor.