发明名称 |
Schottky diode having increased active surface area and method of fabrication |
摘要 |
A Schottky diode comprises a semiconductor body of one conductivity type, the semiconductor body having a grooved surface, and a metal layer on the grooved surface and forming a Schottky junction with the semiconductor body. The semiconductor body preferably includes a silicon substrate with the grooved surface being on a device region defined by a guard ring of a conductivity type opposite to the conductivity type of the semiconductor body. |
申请公布号 |
AU8049201(A) |
申请公布日期 |
2002.02.05 |
申请号 |
AU20010080492 |
申请日期 |
2001.07.06 |
申请人 |
ADVANCED POWER DEVICES |
发明人 |
PAUL CHANG;GEENG-CHUAN CHERN;WAYNE Y. W. HSEUH;VLADIMIR RODOV |
分类号 |
H01L21/28;H01L21/329;H01L27/07;H01L27/08;H01L27/095;H01L29/06;H01L29/78;H01L29/872 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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