发明名称 |
Enhanced light-emitting diode |
摘要 |
A light-emitting diode (LED) constructed of AlGaInP compounds includes a multi-layer window having, in the order of formation, a lightly doped first layer formed of p doped GaP; a low impedance second layer formed of p GaAs; an amorphous conducting layer formed of Indium Tin Oxide (ITO), and a titanium/gold contact. In one embodiment, the contact forms ohmic connections with the second and third layers; and a Schottky diode connection with the first layer. In a second embodiment, the contact forms an ohmic connection with the third layer; and is insulated from direct contact with the first layer. |
申请公布号 |
AU7715801(A) |
申请公布日期 |
2002.02.05 |
申请号 |
AU20010077158 |
申请日期 |
2001.07.25 |
申请人 |
AMERICAN XTAL TECHNOLOGY, INC. |
发明人 |
JOHN CHEN;BINGWEN LIANG;ROBERT SHIH |
分类号 |
H01L33/10;H01L33/14;H01L33/16;H01L33/30;H01L33/38 |
主分类号 |
H01L33/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|