发明名称 CONTACT STRUCTURE OF INTERCONNECTION, MANUFACTURING METHOD THEREOF, THIN FILM TRANSISTOR SUBSTRATE INCLUDING THE SAME AND FABRICATING METHOD THEREOF
摘要 PURPOSE: A method for manufacturing a contact structure of an interconnection is provided to simplify a manufacturing process and to reduce manufacturing cost, by minimizing contact resistance in a contact part, by guaranteeing reliability of the contact part including a pad part and by using aluminium or aluminium alloy of low resistance to form the interconnection. CONSTITUTION: The interconnection is formed on a substrate by using an aluminium-based metal. An insulation layer covering the interconnection is stacked. The insulation layer is patterned to form a contact hole exposing the interconnection. A transparent conductive layer electrically connected to the interconnection is formed. The interconnection is cleaned.
申请公布号 KR20020010264(A) 申请公布日期 2002.02.04
申请号 KR20000043827 申请日期 2000.07.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 NOH, NAM SEOK
分类号 H01L29/786;(IPC1-7):H01L29/786 主分类号 H01L29/786
代理机构 代理人
主权项
地址