发明名称 |
CONTACT STRUCTURE OF INTERCONNECTION, MANUFACTURING METHOD THEREOF, THIN FILM TRANSISTOR SUBSTRATE INCLUDING THE SAME AND FABRICATING METHOD THEREOF |
摘要 |
PURPOSE: A method for manufacturing a contact structure of an interconnection is provided to simplify a manufacturing process and to reduce manufacturing cost, by minimizing contact resistance in a contact part, by guaranteeing reliability of the contact part including a pad part and by using aluminium or aluminium alloy of low resistance to form the interconnection. CONSTITUTION: The interconnection is formed on a substrate by using an aluminium-based metal. An insulation layer covering the interconnection is stacked. The insulation layer is patterned to form a contact hole exposing the interconnection. A transparent conductive layer electrically connected to the interconnection is formed. The interconnection is cleaned.
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申请公布号 |
KR20020010264(A) |
申请公布日期 |
2002.02.04 |
申请号 |
KR20000043827 |
申请日期 |
2000.07.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
NOH, NAM SEOK |
分类号 |
H01L29/786;(IPC1-7):H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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