METHOD OF DEPOSITION OF DIELECTRIC FILM

摘要

PURPOSE: A method of forming dielectric films is provided to have low dielectric constant and improve film characteristics that are also suitable for use as ARCs. CONSTITUTION: The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during layer formation.