发明名称 APPARATUS FOR MEASURING SUBSTRATE TEMPERATURE AND METHOD FOR FABRICATING THE SAME
摘要 PURPOSE: An apparatus for measuring a substrate temperature and a method for fabricating the same are provided to measure a substrate temperature by using a substrate temperature measurement device having the same surface as the substrate. CONSTITUTION: A thin film thermal sensor(3) is formed on a trench(5) of a silicon substrate(1) for measuring temperature. The trench(5) of the silicon substrate(1) for measuring temperature is formed by using a photo etch process and a silicon etch process. A protective silicon substrate(2) is used for protecting the thin film thermal sensor(3) from a process atmosphere. A thermocouple pad(4) is used for connecting a compensative conductive line(6) with the silicon substrate(1), electrically. The thermocouple pad(4) is formed on the silicon substrate(1) for measuring temperature. The silicon substrate(1) for measuring temperature is closely contacted with the protective silicon substrate(2).
申请公布号 KR20020009365(A) 申请公布日期 2002.02.01
申请号 KR20000043214 申请日期 2000.07.24
申请人 ULTECH CO., LTD. 发明人 KIM, JUN TAE;LEE, DONG SEOK;LEE, JONG HYEON;SUK, CHANG GIL
分类号 H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/66
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